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Current page:  TI  >>  TI Models  >>  CSD19537Q3 Detail

CSD19537Q3TI model
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The pictures are for reference only

  • CSD19537Q3

  • Manufacturer:Texas Instruments
  • Batch number:23+
  • Description:MOSFET 100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
  • PDF:Download
  • Quantity:5922

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Detailed

  • TechnologySi
  • Mounting StyleSMD/SMT
  • Package/CaseVSON-CLIP-8
  • Transistor PolarityN-Channel
  • Number of Channels1 Channel
  • Vds-Drain-Source Breakdown Voltage100 V
  • Id-Continuous Drain Current50 A
  • Rds On-Drain-Source On-Resistance14.5 mOhms
  • Vgs - Gate-Source Voltage- 20 V, 20 V
  • Vgs th-Gate-Source Threshold Voltage2.6 V
  • Qg-Gate Charge16 nC
  • Minimum Operating Temperature- 55 C
  • Maximum Operating Temperature 150 C
  • Pd-Power Dissipation83 W
  • Channel ModeEnhancement
  • Qualification
  • Trade NameNexFET
  • PackageReel, Cut Tape, MouseReel

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