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CSD19531KCSTI model

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The pictures are for reference only

  • CSD19531KCS

  • Manufacturer：Texas Instruments
  • Batch number：23+
  • Description：MOSFET 100V 6.4mOhm Pwr MOSFET
  • PDF：Download
  • Quantity：369

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Detailed

  • TechnologySi
  • Mounting StyleThrough Hole
  • Package/CaseTO-220-3
  • Transistor PolarityN-Channel
  • Number of Channels1 Channel
  • Vds-Drain-Source Breakdown Voltage100 V
  • Id-Continuous Drain Current200 A
  • Rds On-Drain-Source On-Resistance7.7 mOhms
  • Vgs - Gate-Source Voltage- 20 V, 20 V
  • Vgs th-Gate-Source Threshold Voltage2.7 V
  • Qg-Gate Charge38 nC
  • Minimum Operating Temperature- 55 C
  • Maximum Operating Temperature 175 C
  • Pd-Power Dissipation179 W
  • Channel ModeEnhancement
  • Qualification
  • Trade NameNexFET
  • PackageTube

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