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Current page:  TI  >>  TI Models  >>  TPS1100DR Detail

TPS1100DRTI model

  • TPS7B8633QDDARQ1

    Low Dropout RegulatorsAutomotive 500-mA, 40-V, ultra-low-IQ, low-dropout (LDO) linear regulator with power good 8-SO PowerPAD -40 to 150

  • LP3878MR-ADJ

    Low Dropout Regulator MicroPwr 800mA Low Noise Adj Vtg Reg

  • LP3879MR-1.2

    800-mA, low-dropout voltage regulator with low-noise & enable 8-SO PowerPAD

  • REG102UA-3.3

    Low Dropout Regulator DMOS 250 mA LDO Reg

  • TPS77801D

    Low Dropout Regulator Fast-Tran-Res 750-mA

  • TPS77818D

    Low Dropout Regulator Fast-Tran-Res 750-mA

  • LP3892EMR-1.2/NOPB

    Low Dropout Regulator 1.5A Fast Response Dual-Rail

  • LP38841MR-ADJ/NOPB

    800-mA, low-VIN (0.635-V), adjustable ultra-low-dropout voltage regulator with enable 8-SO PowerPAD -40 to 125

TI best-selling models

  • SN74AHCU04QPWRG4Q1

    Automotive Catalog 6-Channel, 2V to 5.5V Inverter with TTL Compatible CMOS Inputs 14-TSSOP -40 to 125

  • SN74AHCT240DW

    8-Channel, 4.5V to 5.5V Inverter with TTL Compatible CMOS Inputs 20-SOIC -40 to 125

  • SN74ACT14PW

    6-Channel, 4.5V to 5.5V Inverter with Schmitt Trigger Inputs 14-TSSOP -40 to 85

  • SN74LS05NSR

    6-Channel, 4.75V to 5.25V Bipolar Inverter with Open Collector Output 14-SO 0 to 70

  • CD4069UBPW

    6-Channel, 3V to 18V Inverter 14-TSSOP -55 to 125

  • SN74ALS1005N

    6-Channel, 4.5V to 5.5V Bipolar Inverter with Open Collector Output 14-PDIP 0 to 70

  • SN74AHC04D

    6-Channel, 2V to 5.5V Inverter 14-SOIC -40 to 125

  • SN74AS1004ADR

    6-Channel, 4.5V to 5.5V Bipolar Inverter 14-SOIC 0 to 70

The pictures are for reference only

  • TPS1100DR

  • Manufacturer：Texas Instruments
  • Batch number：23+
  • Description：Surface mount type P channel 15 V 1.6A (Ta) 791mW (Ta) 8-SOIC
  • PDF：Download
  • Quantity：5000+

Price advantage,TPS1100DR Spot goods can be shipped on the same day

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Detailed

  • ManufacturerTexas Instruments
  • Series-
  • PackagingTape and Reel (TR)
  • FET TypeP-Channel
  • TechnologyMOSFET (Metal Oxide)
  • Drain-Source Voltage (Vdss)15 V
  • Current at 25°C - Continuous Drain (Id)1.6 A (Ta)
  • Drive Voltage (Rds On Max, Rds On Min)2.7 V, 10 V
  • On-Resistance (max) at Id, Vgs180 mOhm @ 1.5 A, 10 V
  • Vgs(th) (max) at Id1.5 V @ 250 μA
  • Gate Charge (Qg) (max) at Vgs5.45 nC @ 10 V
  • Vgs (max) 2V, -15V
  • FET Function-
  • Power Dissipation (Max)791mW (Ta)
  • Operating Temperature-40°C ~ 150°C (TJ)
  • Mounting TypeSurface Mount
  • Supplier Device Package8-SOIC
  • Package/Case8-SOIC (0.154", 3.90mm Width)

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First level agent, large and small batch shipments, welcome to inquire

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