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Current page:  TI  >>  TI Models  >>  CSD18509Q5BT Detail

CSD18509Q5BTTI model
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The pictures are for reference only

  • CSD18509Q5BT

  • Manufacturer:Texas Instruments
  • Batch number:23+
  • Description:Surface Mount N-Channel 40 V 100A (Ta) 3.1W (Ta), 195W (Tc) 8-VSON-CLIP (5x6)
  • PDF:Download
  • Quantity:5428

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Detailed

  • Texas Instruments
  • NexFET?
  • PackagingTape and Reel (TR)
  • FET TypeN-Channel
  • TechnologyMOSFET (Metal Oxide)
  • Drain-Source Voltage (Vdss)40 V
  • Current at 25°C - Continuous Drain (Id)100A (Ta)
  • Drive Voltage (Rds On Max, Rds On Min)4.5V, 10V
  • On-Resistance (max) at Id, Vgs1.2 mOhm @ 32A, 10V
  • Vgs(th) (max) at Id2.2V @ 250μA
  • Gate Charge?(Qg) (max) at Vgs195 nC @ 10 V
  • Vgs (max)±20V
  • Input capacitance (Ciss) (max) at different Vds13900 pF @ 20 V
  • FET function-
  • Power dissipation (max)3.1W (Ta), 195W (Tc)
  • Operating temperature-55°C ~ 150°C (TJ)
  • Mounting typeSurface mount
  • Supplier device package8-VSON-CLIP (5x6)
  • Package/case8-PowerTDFN

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